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Samsung M391B5273CH0-CH9 4GB
Corsair CMU32GX4M2C3200C16 16GB

Samsung M391B5273CH0-CH9 4GB vs Corsair CMU32GX4M2C3200C16 16GB

Overall score
star star star star star
Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

Overall score
star star star star star
Corsair CMU32GX4M2C3200C16 16GB

Corsair CMU32GX4M2C3200C16 16GB

Differences Specifications Comments

Differences

Samsung M391B5273CH0-CH9 4GB Reasons to consider
Samsung M391B5273CH0-CH9 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 31
    Around 13% lower latency
Corsair CMU32GX4M2C3200C16 16GB Reasons to consider
Corsair CMU32GX4M2C3200C16 16GB
Report a bug
  • Faster reading speed, GB/s
    17.8 left arrow 13.4
    Average value in the tests
  • Faster write speed, GB/s
    13.4 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M391B5273CH0-CH9 4GB
Corsair CMU32GX4M2C3200C16 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 31
  • Read speed, GB/s
    13.4 left arrow 17.8
  • Write speed, GB/s
    8.4 left arrow 13.4
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2275 left arrow 3403

Samsung M391B5273CH0-CH9 4GB RAM comparisons

Samsung M391B5273DH0-CH9 4GB
Corsair CMR32GX4M2C3333C16 16GB

Corsair CMU32GX4M2C3200C16 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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