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Samsung M391B5273CH0-CH9 4GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB

Samsung M391B5273CH0-CH9 4GB vs Crucial Technology CT8G4SFRA32A.M4FE 8GB

Overall score
star star star star star
Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

Overall score
star star star star star
Crucial Technology CT8G4SFRA32A.M4FE 8GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Differences Specifications Comments

Differences

Samsung M391B5273CH0-CH9 4GB Reasons to consider
Samsung M391B5273CH0-CH9 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 30
    Around 10% lower latency
  • Faster write speed, GB/s
    8.4 left arrow 7.4
    Average value in the tests
Crucial Technology CT8G4SFRA32A.M4FE 8GB Reasons to consider
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Report a bug
  • Faster reading speed, GB/s
    14.6 left arrow 13.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 10600
    Around 2.42 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M391B5273CH0-CH9 4GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 30
  • Read speed, GB/s
    13.4 left arrow 14.6
  • Write speed, GB/s
    8.4 left arrow 7.4
  • Memory bandwidth, mbps
    10600 left arrow 25600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2275 left arrow 2196

Samsung M391B5273CH0-CH9 4GB RAM comparisons

Samsung M391B5273DH0-CH9 4GB
Corsair CMR32GX4M2C3333C16 16GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
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