RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Avant Technology J642GU42J5213N2 16GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Avant Technology J642GU42J5213N2 16GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Avant Technology J642GU42J5213N2 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
29
Around 10% lower latency
Faster write speed, GB/s
9.0
8.9
Average value in the tests
Reasons to consider
Avant Technology J642GU42J5213N2 16GB
Report a bug
Faster reading speed, GB/s
14
12.8
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Avant Technology J642GU42J5213N2 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
29
Read speed, GB/s
12.8
14.0
Write speed, GB/s
9.0
8.9
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2143
2345
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Avant Technology J642GU42J5213N2 16GB RAM comparisons
Crucial Technology BLS8G4D240FSC.16FBD 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hexon Technology Pte Ltd HEXON 1GB
Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB
Kingston 9905471-002.A00LF 2GB
Corsair CMD32GX4M4B3200C16 8GB
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology CT32G4SFD832A.M16FB 32GB
Samsung M393B5170EH1-CH9 4GB
Samsung M471A1A43DB0-CPB 8GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Samsung M471B5173QH0-YK0 4GB
Hewlett-Packard 7TE39AA#ABC 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Kingston 9905625-076.A00G 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
Kingston KTC1G-UDIMM 1GB
G Skill Intl F4-3200C14-32GTRS 32GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMU32GX4M2D3200C16 16GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-4000C18-8GTZKK 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Corsair CMR16GX4M2E4266C19 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT8G4DFD8213.C16FBD1 8GB
Report a bug
×
Bug description
Source link