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Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-2666C18-4GFX 4GB

Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-2666C18-4GFX 4GB

Overall score
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Overall score
star star star star star
G Skill Intl F4-2666C18-4GFX 4GB

G Skill Intl F4-2666C18-4GFX 4GB

Differences Specifications Comments

Differences

Samsung M391B5673EH1-CH9 2GB Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 74
    Around 65% lower latency
  • Faster write speed, GB/s
    9.0 left arrow 8.6
    Average value in the tests
G Skill Intl F4-2666C18-4GFX 4GB Reasons to consider
G Skill Intl F4-2666C18-4GFX 4GB
Report a bug
  • Faster reading speed, GB/s
    15.4 left arrow 12.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 10600
    Around 2.01 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-2666C18-4GFX 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    26 left arrow 74
  • Read speed, GB/s
    12.8 left arrow 15.4
  • Write speed, GB/s
    9.0 left arrow 8.6
  • Memory bandwidth, mbps
    10600 left arrow 21300
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 11 13 15 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2143 left arrow 1849

Samsung M391B5673EH1-CH9 2GB RAM comparisons

Micron Technology 9JSF25672AZ-1G6M1 2GB
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G Skill Intl F4-2666C18-4GFX 4GB RAM comparisons

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TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
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