RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3200C14-8GTRG 8GB
Compare
Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-3200C14-8GTRG 8GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
G Skill Intl F4-3200C14-8GTRG 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C14-8GTRG 8GB
Report a bug
Below the latency in the PassMark tests, ns
21
26
Around -24% lower latency
Faster reading speed, GB/s
20.4
12.8
Average value in the tests
Faster write speed, GB/s
18.1
9.0
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3200C14-8GTRG 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
21
Read speed, GB/s
12.8
20.4
Write speed, GB/s
9.0
18.1
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2143
4230
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
G Skill Intl F4-3200C14-8GTRG 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9965516-112.A00LF 16GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMU64GX4M4A2666C16 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-3200C22-16GRS 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMN16GX4M2Z3200C16 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMW32GX4M2Z2933C16 16GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3200C14-8GTRG 8GB
AMD AE34G1601U1 4GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMK32GX4M2F4000C19 16GB
Kingston 9905471-076.A00LF 8GB
Kingston 9965667-001.A00G 16GB
Kingston 9905403-090.A01LF 4GB
Mushkin 99[2/7/4]183 8GB
Kingston 9965433-034.A00LF 4GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMV16GX4M1A2666C18 16GB
Kingston HP669238-071-HYC 4GB
INTENSO 5641152 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
Report a bug
×
Bug description
Source link