Samsung M391B5673EH1-CH9 2GB vs Micron Technology 36ASF2G72PZ-2G1B1 16GB

Overall score

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Overall score

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Differences Specifications Comments

Differences

Samsung M391B5673EH1-CH9 2GB

Reasons to consider
Samsung M391B5673EH1-CH9 2GB

Below the latency in the PassMark tests, ns

26 51

Around 49% lower latency
Faster reading speed, GB/s

12.8 9.9

Average value in the tests
Faster write speed, GB/s

9.0 8.1

Average value in the tests

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Reasons to consider
Micron Technology 36ASF2G72PZ-2G1B1 16GB

Higher memory bandwidth, mbps

17000 10600

Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M391B5673EH1-CH9 2GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

26 51
Read speed, GB/s

12.8 9.9
Write speed, GB/s

9.0 8.1
Memory bandwidth, mbps

10600 17000

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2143 2314

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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