RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Ramaxel Technology RMUA5110MB78HAF2400 8GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Ramaxel Technology RMUA5110MB78HAF2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
36
Around 28% lower latency
Reasons to consider
Ramaxel Technology RMUA5110MB78HAF2400 8GB
Report a bug
Faster reading speed, GB/s
14.7
12.8
Average value in the tests
Faster write speed, GB/s
9.4
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
36
Read speed, GB/s
12.8
14.7
Write speed, GB/s
9.0
9.4
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2143
2488
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
PUSKILL DDR3 1600 8G 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Kingston 9905403-061.A00LF 2GB
Mushkin MR[A/B]4U266GHHF16G 16GB
TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA84GR7MFR4N-TF 32GB
Kingston ACR16D3LS1NGG/4G 4GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
SK Hynix DDR2 800 2G 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston 9905678-012.A00G 8GB
Samsung M3 78T2863EHS-CF7 1GB
Avant Technology W641GU42J5213NC 8GB
Samsung M378B5673EH1-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
A-DATA Technology DQKD1A08 1GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
Kingston K531R8-MIN 4GB
Corsair MK16GX44A2666C16 4GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M378A5143DB0-CPB 4GB
Kingston 9905403-061.A00LF 2GB
Kingston SMD4-S8G48HJ-26V 8GB
Avant Technology F641GU67F9333G 8GB
G Skill Intl F4-2400C15-16GTZR 16GB
Report a bug
×
Bug description
Source link