RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Samsung M393A8K40B21-CTC 64GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Samsung M393A8K40B21-CTC 64GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Samsung M393A8K40B21-CTC 64GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
39
Around 33% lower latency
Faster reading speed, GB/s
12.8
8.9
Average value in the tests
Faster write speed, GB/s
9.0
6.8
Average value in the tests
Reasons to consider
Samsung M393A8K40B21-CTC 64GB
Report a bug
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Samsung M393A8K40B21-CTC 64GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
39
Read speed, GB/s
12.8
8.9
Write speed, GB/s
9.0
6.8
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2143
2011
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Samsung M393A8K40B21-CTC 64GB RAM comparisons
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT41GU7BFR8A-PB 8GB
Corsair CMK8GX4M1Z3600C18 8GB
Samsung M395T2863QZ4-CF76 1GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Teikon TMA851S6CJR6N-VKSC 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL8G26C16U4B.8FD 8GB
Samsung M391B5673EH1-CH9 2GB
Samsung M393A8K40B21-CTC 64GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-4266C17-8GTZR 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMD32GX4M4A2800C16 8GB
AMD AE34G1601U1 4GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
Kingston 9905471-076.A00LF 8GB
Corsair CMR16GX4M2C3000C16 8GB
SK Hynix HMT451S6AFR8A-PB 4GB
G Skill Intl F4-3600C18-8GTZN 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Teikon TMA851S6AFR6N-UHHC 4GB
Samsung M378A1K43EB2-CWE 8GB
Essencore Limited IM48GU88A30-FGGHMB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905625-097.A00G 16GB
Report a bug
×
Bug description
Source link