RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Samsung M471A1G44AB0-CWE 8GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Samsung M471A1G44AB0-CWE 8GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Samsung M471A1G44AB0-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
50
Around 48% lower latency
Reasons to consider
Samsung M471A1G44AB0-CWE 8GB
Report a bug
Faster reading speed, GB/s
15.3
12.8
Average value in the tests
Faster write speed, GB/s
10.9
9.0
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Samsung M471A1G44AB0-CWE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
50
Read speed, GB/s
12.8
15.3
Write speed, GB/s
9.0
10.9
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2143
2512
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Samsung M471A1G44AB0-CWE 8GB RAM comparisons
Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Kingston 9905598-009.A00G 8GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3000C15-4GRK 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
SK Hynix HMA851S6AFR6N-UH 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston 9905783-025.A01G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Mushkin 991586 2GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT8G4DFS6266.M4FB 8GB
Samsung M391B5673EH1-CH9 2GB
Samsung M471A1G44AB0-CWE 8GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston 9965662-019.A00G 32GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
Team Group Inc. UD5-6400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Report a bug
×
Bug description
Source link