RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
71
Around 63% lower latency
Faster write speed, GB/s
9.0
6.4
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Faster reading speed, GB/s
15.6
12.8
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
71
Read speed, GB/s
12.8
15.6
Write speed, GB/s
9.0
6.4
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2143
1650
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Smart Modular SH564128FH8NZQNSCG 4GB
Neo Forza GKE160SO204808-3200 16GB
Crucial Technology CT102464BF160B-16F 8GB
Corsair CMK16GX4M4B3200C15 4GB
Samsung M391B5673EH1-CH9 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Kingston 99U5403-465.A00LF 8GB
Corsair CMW64GX4M4A2666C16 16GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMD32GX4M4E4000C19 8GB
Kingston KF552C40-16 16GB
G Skill Intl F4-4000C17-8GVKB 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666
Kingston KHX318C10FR/8G 8GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
Kingmax Semiconductor FLGG45F-E8K3B 8GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMD16GX4M2B3200C14 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-2933C16-8GTZRX 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston CBD26D4U9S8MH-8 8GB
Report a bug
×
Bug description
Source link