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Samsung M393A2G40DB1-CRC 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Samsung M393A2G40DB1-CRC 16GB vs Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Overall score
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Samsung M393A2G40DB1-CRC 16GB

Samsung M393A2G40DB1-CRC 16GB

Overall score
star star star star star
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Differences Specifications Comments

Differences

Samsung M393A2G40DB1-CRC 16GB Reasons to consider
Samsung M393A2G40DB1-CRC 16GB
Report a bug
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB Reasons to consider
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 81
    Around -189% lower latency
  • Faster reading speed, GB/s
    12.2 left arrow 8.5
    Average value in the tests
  • Faster write speed, GB/s
    9.3 left arrow 5.6
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M393A2G40DB1-CRC 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    81 left arrow 28
  • Read speed, GB/s
    8.5 left arrow 12.2
  • Write speed, GB/s
    5.6 left arrow 9.3
  • Memory bandwidth, mbps
    19200 left arrow 19200
Other
  • Description
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1651 left arrow 2382

Samsung M393A2G40DB1-CRC 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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