RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70BH0-CK0 8GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Compare
Samsung M393B1G70BH0-CK0 8GB vs Chun Well Technology Holding Limited D4U0832161B 8GB
Overall score
Samsung M393B1G70BH0-CK0 8GB
Overall score
Chun Well Technology Holding Limited D4U0832161B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-CK0 8GB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited D4U0832161B 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
51
Around -50% lower latency
Faster reading speed, GB/s
19.1
9.8
Average value in the tests
Faster write speed, GB/s
12.6
8.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-CK0 8GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
51
34
Read speed, GB/s
9.8
19.1
Write speed, GB/s
8.1
12.6
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2208
3178
Samsung M393B1G70BH0-CK0 8GB RAM comparisons
TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB
Chun Well Technology Holding Limited D4U0832161B 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston HP669238-071-HYC 4GB
Gloway International (HK) STKD4GAM2133-F 8GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A
Corsair CM4X16GD3200C16K4E 16GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4400C19-16GTZR 16GB
Avant Technology F6451U64F9333G 4GB
Avant Technology J642GU42J9266NF 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston XW21KG-HYD-NX 8GB
Mushkin 996902 2GB
Samsung M471A4G43AB1-CWE 32GB
SK Hynix DDR2 800 2G 2GB
Kingston LV32D4U2S8HD-8X 8GB
Kingston 9905471-002.A00LF 2GB
Corsair CMK128GX4M4E3200C16 32GB
A-DATA Technology DDR4 2400 16GB
Crucial Technology CT8G4DFD8213.C16FBD2 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CMK16GX4M2K4500C19 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMW16GX4M2E3200C16 8GB
Kingston 9965516-112.A00LF 16GB
Kingston 9905630-063.A00G 16GB
Samsung M393B1K70QB0-CK0 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK16GX4M2A2666C18 8GB
Report a bug
×
Bug description
Source link