RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Compare
Samsung M393B1G70BH0-YK0 8GB vs Crucial Technology BL8G36C16U4B.M8FE1 8GB
Overall score
Samsung M393B1G70BH0-YK0 8GB
Overall score
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-YK0 8GB
Report a bug
Reasons to consider
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
49
Around -81% lower latency
Faster reading speed, GB/s
20.1
10.2
Average value in the tests
Faster write speed, GB/s
16.7
8.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
27
Read speed, GB/s
10.2
20.1
Write speed, GB/s
8.1
16.7
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2465
3759
Samsung M393B1G70BH0-YK0 8GB RAM comparisons
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DDR3 1866 2OZ 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
A-DATA Technology VDQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CM4X8GF2400C14K4 8GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-3200C22-16GRS 16GB
Samsung 1600 CL10 Series 8GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Samsung M471B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Samsung M393B1K70QB0-CK0 8GB
Kingston KHX2133C13D4/8GX 8GB
Kingston 9965662-016.A00G 16GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Samsung M393B1G70QH0-YK0 8GB
Kingston ACR26D4S9S1ME-4 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Corsair CMD16GX4M2A2666C15 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMK32GX4M4D3000C16 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT8G4DFD824A.C16FDD2 8GB
Samsung M471B1G73DB0-YK0 8GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Kingston 9965525-155.A00LF 8GB
Kingston HP32D4U8D8HC-16X 16GB
Report a bug
×
Bug description
Source link