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A-DATA Technology DDR3 1866 2OZ 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

A-DATA Technology DDR3 1866 2OZ 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Overall score
star star star star star
A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Differences Specifications Comments

Differences

A-DATA Technology DDR3 1866 2OZ 4GB Reasons to consider
A-DATA Technology DDR3 1866 2OZ 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    21 left arrow 22
    Around 5% lower latency
  • Faster reading speed, GB/s
    17.8 left arrow 17.7
    Average value in the tests
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
  • Faster write speed, GB/s
    12.7 left arrow 10.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
A-DATA Technology DDR3 1866 2OZ 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    21 left arrow 22
  • Read speed, GB/s
    17.8 left arrow 17.7
  • Write speed, GB/s
    10.0 left arrow 12.7
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2771 left arrow 3075

A-DATA Technology DDR3 1866 2OZ 4GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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