RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70BH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
Compare
Samsung M393B1G70BH0-YK0 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
Overall score
Samsung M393B1G70BH0-YK0 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-YK0 8GB
Report a bug
Faster write speed, GB/s
8.1
8.0
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
Report a bug
Below the latency in the PassMark tests, ns
35
49
Around -40% lower latency
Faster reading speed, GB/s
10.3
10.2
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
35
Read speed, GB/s
10.2
10.3
Write speed, GB/s
8.1
8.0
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2465
2327
Samsung M393B1G70BH0-YK0 8GB RAM comparisons
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB RAM comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
A-DATA Technology AD73I1C1674EV 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Transcend Information JM3200HLE-32G 32GB
Samsung M393B1G70BH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-2666C18-8GTZR 8GB
Samsung M393B2G70BH0-YK0 16GB
G Skill Intl F4-3300C16-4GRKD 4GB
A-DATA Technology DQKD1A08 1GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-3200C14-16GFX 16GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-4000C18-32GVK 32GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Corsair CMK32GX4M4A2800C16 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston HX424C15FB/16 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M378A1K43BB2-CRC 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
A-DATA Technology DDR2 800G 2GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Report a bug
×
Bug description
Source link