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Samsung M393B1G70BH0-YK0 8GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB

Samsung M393B1G70BH0-YK0 8GB vs Micron Technology 36ASF4G72PZ-2G6H1 32GB

Overall score
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Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Overall score
star star star star star
Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Differences Specifications Comments

Differences

Samsung M393B1G70BH0-YK0 8GB Reasons to consider
Samsung M393B1G70BH0-YK0 8GB
Report a bug
  • Faster reading speed, GB/s
    10.2 left arrow 8.9
    Average value in the tests
  • Faster write speed, GB/s
    8.1 left arrow 6.9
    Average value in the tests
Micron Technology 36ASF4G72PZ-2G6H1 32GB Reasons to consider
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Report a bug
  • Below the latency in the PassMark tests, ns
    38 left arrow 49
    Around -29% lower latency
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 38
  • Read speed, GB/s
    10.2 left arrow 8.9
  • Write speed, GB/s
    8.1 left arrow 6.9
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2465 left arrow 2206

Samsung M393B1G70BH0-YK0 8GB RAM comparisons

Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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