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Samsung M393B1K70CH0-CH9 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Samsung M393B1K70CH0-CH9 8GB vs Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Overall score
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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Overall score
star star star star star
Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Differences Specifications Comments

Differences

Samsung M393B1K70CH0-CH9 8GB Reasons to consider
Samsung M393B1K70CH0-CH9 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    44 left arrow 66
    Around 33% lower latency
  • Faster write speed, GB/s
    8.1 left arrow 7.9
    Average value in the tests
Gloway International Co. Ltd. TYA4U3000E16081C 8GB Reasons to consider
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Report a bug
  • Faster reading speed, GB/s
    15.9 left arrow 11.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B1K70CH0-CH9 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    44 left arrow 66
  • Read speed, GB/s
    11.2 left arrow 15.9
  • Write speed, GB/s
    8.1 left arrow 7.9
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2293 left arrow 1877

Samsung M393B1K70CH0-CH9 8GB RAM comparisons

EVGA 08G-D3-2133-MR 4GB
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Gloway International Co. Ltd. TYA4U3000E16081C 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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