RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-3200C16-8GVRB 8GB
Compare
Samsung M393B1K70CH0-YH9 8GB vs G Skill Intl F4-3200C16-8GVRB 8GB
Overall score
Samsung M393B1K70CH0-YH9 8GB
Overall score
G Skill Intl F4-3200C16-8GVRB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1K70CH0-YH9 8GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C16-8GVRB 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
49
Around -58% lower latency
Faster reading speed, GB/s
17.7
10.1
Average value in the tests
Faster write speed, GB/s
13.4
7.8
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-3200C16-8GVRB 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
31
Read speed, GB/s
10.1
17.7
Write speed, GB/s
7.8
13.4
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2070
3313
Samsung M393B1K70CH0-YH9 8GB RAM comparisons
Samsung M393B1K70CH0-CH9 8GB
Samsung M392B1K70CM0-YH9 8GB
G Skill Intl F4-3200C16-8GVRB 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-3200C16-8GVRB 8GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3600C18-16GTZN 16GB
Samsung M378B1G73QH0-CK0 8GB
Crucial Technology BLS8G4D240FSB.16FAR 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMK8GX4M2B3200C16 4GB
Samsung M4 70T5267AZ3-CF7 4GB
Kingston X0N6VG-HYD2 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMWX8GF2666C16W4 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
SK Hynix HMA82GS6AFR8N-UH 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
ADVAN Inc AM42E28UD04T-NVL 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Corsair CMR32GX4M2C3000C16 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston HP24D4U7S8MD-8 8GB
Report a bug
×
Bug description
Source link