RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1K70CH0-YH9 8GB
Transcend Information TS1GSH64V4B 8GB
Compare
Samsung M393B1K70CH0-YH9 8GB vs Transcend Information TS1GSH64V4B 8GB
Overall score
Samsung M393B1K70CH0-YH9 8GB
Overall score
Transcend Information TS1GSH64V4B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1K70CH0-YH9 8GB
Report a bug
Reasons to consider
Transcend Information TS1GSH64V4B 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
49
Around -81% lower latency
Faster reading speed, GB/s
12.8
10.1
Average value in the tests
Faster write speed, GB/s
8.2
7.8
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1K70CH0-YH9 8GB
Transcend Information TS1GSH64V4B 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
27
Read speed, GB/s
10.1
12.8
Write speed, GB/s
7.8
8.2
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2070
2148
Samsung M393B1K70CH0-YH9 8GB RAM comparisons
Samsung M393B1K70CH0-CH9 8GB
Samsung M392B1K70CM0-YH9 8GB
Transcend Information TS1GSH64V4B 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Panram International Corporation D4N2400PS-8G 8GB
Samsung M393B1K70CH0-YH9 8GB
Transcend Information TS1GSH64V4B 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
G Skill Intl F4-3600C17-8GTZ 8GB
Kingston KP4T2F-PSB 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Samsung M471B5173QH0-YK0 4GB
Samsung M393A1K43BB0-CRC 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Kingston K1N7HK-ELC 2GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
Samsung M378T5663QZ3-CF7 2GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS16G4D26BFSE.16FD 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston KHX3200C18D4/8G 8GB
Samsung DDR3 8GB 1600MHz 8GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-3466C16-8GVK 8GB
Report a bug
×
Bug description
Source link