RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Compare
Samsung M393B2G70BH0-CK0 16GB vs Micron Technology 36ASF4G72PZ-2G3D1 32GB
Overall score
Samsung M393B2G70BH0-CK0 16GB
Overall score
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B2G70BH0-CK0 16GB
Report a bug
Reasons to consider
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Report a bug
Below the latency in the PassMark tests, ns
34
54
Around -59% lower latency
Faster reading speed, GB/s
10.6
9.2
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
54
34
Read speed, GB/s
9.2
10.6
Write speed, GB/s
8.1
8.1
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2105
2237
Samsung M393B2G70BH0-CK0 16GB RAM comparisons
Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BL16G30C15U4B.16FE 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Apacer Technology 76.D305G.D060B 16GB
Samsung M393B1K70QB0-CK0 8GB
Kingston KMKYF9-MIB 8GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Crucial Technology CT8G4SFS824A.M8FB 8GB
PNY Electronics PNY 2GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Samsung M393B1G70QH0-YK0 8GB
Kingston KVR24N17S8/4 4GB
A-DATA Technology DDR3 1600 4GB
Avant Technology W6451U67J7240NB 4GB
Kingston KHX2400C11D3/4GX 4GB
Crucial Technology CT16G4DFD824A.M16FD 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL16G32C16U4BL.M16FE 16GB
A-DATA Technology AD73I1C1674EV 4GB
Apacer Technology 78.D2GFH.4030B 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3300C16-8GTZKW 8GB
Report a bug
×
Bug description
Source link