Samsung M393B2G70BH0-YK0 16GB
Micron Technology 4ATF51264AZ-2G6E1 4GB

Samsung M393B2G70BH0-YK0 16GB vs Micron Technology 4ATF51264AZ-2G6E1 4GB

Overall score
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Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Overall score
star star star star star
Micron Technology 4ATF51264AZ-2G6E1 4GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

Differences

  • Below the latency in the PassMark tests, ns
    34 left arrow 63
    Around -85% lower latency
  • Faster reading speed, GB/s
    16.4 left arrow 8.1
    Average value in the tests
  • Faster write speed, GB/s
    12.1 left arrow 7.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B2G70BH0-YK0 16GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    63 left arrow 34
  • Read speed, GB/s
    8.1 left arrow 16.4
  • Write speed, GB/s
    7.5 left arrow 12.1
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    1945 left arrow 2616
RAM Latency Calculator
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