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Samsung M393B5170EH1-CH9 4GB
Corsair CMD16GX4M4B3200C16 4GB

Samsung M393B5170EH1-CH9 4GB vs Corsair CMD16GX4M4B3200C16 4GB

Overall score
star star star star star
Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

Overall score
star star star star star
Corsair CMD16GX4M4B3200C16 4GB

Corsair CMD16GX4M4B3200C16 4GB

Differences Specifications Comments

Differences

Samsung M393B5170EH1-CH9 4GB Reasons to consider
Samsung M393B5170EH1-CH9 4GB
Report a bug
Corsair CMD16GX4M4B3200C16 4GB Reasons to consider
Corsair CMD16GX4M4B3200C16 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    34 left arrow 51
    Around -50% lower latency
  • Faster reading speed, GB/s
    15.7 left arrow 10.2
    Average value in the tests
  • Faster write speed, GB/s
    11.5 left arrow 7.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B5170EH1-CH9 4GB
Corsair CMD16GX4M4B3200C16 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    51 left arrow 34
  • Read speed, GB/s
    10.2 left arrow 15.7
  • Write speed, GB/s
    7.6 left arrow 11.5
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2049 left arrow 3226

Samsung M393B5170EH1-CH9 4GB RAM comparisons

Corsair CMT8GX3M2A1866C9 4GB
G Skill Intl F4-2133C15-16GRS 16GB

Corsair CMD16GX4M4B3200C16 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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