Samsung M393B5170EH1-CH9 4GB vs Corsair CMD16GX4M4B3200C16 4GB

总分

Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

总分

Corsair CMD16GX4M4B3200C16 4GB

Corsair CMD16GX4M4B3200C16 4GB

差异规格评论

差异

Samsung M393B5170EH1-CH9 4GB

需要考虑的原因
Samsung M393B5170EH1-CH9 4GB

报告一个错误

Corsair CMD16GX4M4B3200C16 4GB

需要考虑的原因
Corsair CMD16GX4M4B3200C16 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 51

左右 -50% 更低的延时
更快的读取速度，GB/s

15.7 10.2

测试中的平均数值
更快的写入速度，GB/s

11.5 7.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170EH1-CH9 4GB

Corsair CMD16GX4M4B3200C16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 34
读取速度，GB/s

10.2 15.7
写入速度，GB/s

7.6 11.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2049 3226

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KF3200C16D4/32GX 32GB

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Crucial Technology CT8G4SFS8213.M8FB 8GB

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Samsung M393B1K70CH0-CH9 8GB

Kingston KHX3200C18D4/16G 16GB

Kingston KHX3200C18D4/16G 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Kingston 9905744-077.A00G 16GB

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Kingston 9905403-134.A00LF 2GB

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G Skill Intl F4-3200C14-16GTZ 16GB