Samsung M393B5170EH1-CH9 4GB vs G Skill Intl F4-2133C15-16GRS 16GB

总分

Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

总分

G Skill Intl F4-2133C15-16GRS 16GB

G Skill Intl F4-2133C15-16GRS 16GB

差异规格评论

差异

Samsung M393B5170EH1-CH9 4GB

需要考虑的原因
Samsung M393B5170EH1-CH9 4GB

报告一个错误

G Skill Intl F4-2133C15-16GRS 16GB

需要考虑的原因
G Skill Intl F4-2133C15-16GRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 51

左右 -34% 更低的延时
更快的读取速度，GB/s

13 10.2

测试中的平均数值
更快的写入速度，GB/s

10.3 7.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170EH1-CH9 4GB

G Skill Intl F4-2133C15-16GRS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 38
读取速度，GB/s

10.2 13.0
写入速度，GB/s

7.6 10.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2049 2499

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Avant Technology W641GU42J9266NC 8GB

Avant Technology W641GU42J9266NC 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Chun Well Technology Holding Limited D4U0836144B 8GB

Chun Well Technology Holding Limited D4U0836144B 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Samsung M378A2K43CB1-CRC 16GB

Samsung M378A2K43CB1-CRC 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Patriot Memory (PDP Systems) PSD48G240081 8GB

Patriot Memory (PDP Systems) PSD48G240081 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M47472K43DB1-CTD 16GB

Samsung M47472K43DB1-CTD 16GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Kingston 9965596-036.B00G 8GB

Kingston 9965596-036.B00G 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

G Skill Intl F4-2666C19-8GVK 8GB

G Skill Intl F4-2666C19-8GVK 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Crucial Technology BLS8G4D240FSEK.8FBD 8GB

Crucial Technology BLS8G4D240FSEK.8FBD 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Corsair CMWX8GF2933Z16W4 8GB

Corsair CMWX8GF2933Z16W4 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Micron Technology 8ATF51264HZ-2G1A2 4GB

Micron Technology 8ATF51264HZ-2G1A2 4GB