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Samsung M393B5170EH1-CH9 4GB
Corsair CMT8GX3M2A1866C9 4GB

Samsung M393B5170EH1-CH9 4GB vs Corsair CMT8GX3M2A1866C9 4GB

总分
star star star star star
Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

总分
star star star star star
Corsair CMT8GX3M2A1866C9 4GB

Corsair CMT8GX3M2A1866C9 4GB

差异 规格 评论

差异

Samsung M393B5170EH1-CH9 4GB 需要考虑的原因
Samsung M393B5170EH1-CH9 4GB
报告一个错误
Corsair CMT8GX3M2A1866C9 4GB 需要考虑的原因
Corsair CMT8GX3M2A1866C9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 51
    左右 -70% 更低的延时
  • 更快的读取速度，GB/s
    16.3 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 7.6
    测试中的平均数值

规格

完整的技术规格清单
Samsung M393B5170EH1-CH9 4GB
Corsair CMT8GX3M2A1866C9 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    51 left arrow 30
  • 读取速度，GB/s
    10.2 left arrow 16.3
  • 写入速度，GB/s
    7.6 left arrow 10.8
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2049 left arrow 2778

Samsung M393B5170EH1-CH9 4GB RAM的比较

G Skill Intl F4-2133C15-16GRS 16GB

Corsair CMT8GX3M2A1866C9 4GB RAM的比较

Corsair CMD8GX3M2A1866C9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3000C16-8GISB 8GB
G Skill Intl F4-3000C16-8GISB 8GB
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A-DATA Technology DOVF1B163G2G 2GB
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Kingston HP37D4U1S8ME-16X 16GB
内存RAM
Samsung M393B5170EH1-CH9 4GB
Samsung M393B5170EH1-CH9 4GB
Corsair CMT8GX3M2A1866C9 4GB
Corsair CMT8GX3M2A1866C9 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C14-32GTRS 32GB
G Skill Intl F4-3200C14-32GTRS 32GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
SK Hynix HMA451S6AFR8N-TF 4GB
SK Hynix HMA451S6AFR8N-TF 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3000C15-4GVSB 4GB
G Skill Intl F4-3000C15-4GVSB 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Apacer Technology 78.C2GF2.AU00B 8GB
Apacer Technology 78.C2GF2.AU00B 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSC.8FBD2 4GB
Crucial Technology BLS4G4D240FSC.8FBD2 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMK16GX4M2D3000C16 8GB
Corsair CMK16GX4M2D3000C16 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
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Kingston HP26D4S9S1ME-4 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3600C18-16GTZN 16GB
G Skill Intl F4-3600C18-16GTZN 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Super Talent F21UB8GS 8GB
Super Talent F21UB8GS 8GB
内存RAM