A-DATA Technology DDR3 1600 4GB vs G Skill Intl F4-3000C15-4GVSB 4GB

总分

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

总分

G Skill Intl F4-3000C15-4GVSB 4GB

G Skill Intl F4-3000C15-4GVSB 4GB

差异规格评论

差异

A-DATA Technology DDR3 1600 4GB

需要考虑的原因
A-DATA Technology DDR3 1600 4GB

报告一个错误

G Skill Intl F4-3000C15-4GVSB 4GB

需要考虑的原因
G Skill Intl F4-3000C15-4GVSB 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 41

左右 -78% 更低的延时
更快的读取速度，GB/s

16.6 14

测试中的平均数值
更快的写入速度，GB/s

11.7 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1600 4GB

G Skill Intl F4-3000C15-4GVSB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 23
读取速度，GB/s

14.0 16.6
写入速度，GB/s

8.5 11.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2324 2495

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Kingston CBD26D4S9S8ME-8 8GB

Kingston CBD26D4S9S8ME-8 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Crucial Technology BLS16G4S240FSD.16FAD 16GB

Crucial Technology BLS16G4S240FSD.16FAD 16GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9905625-098.A00G 16GB

Kingston 9905625-098.A00G 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Panram International Corporation PUD42133C158G2VS 8GB

Panram International Corporation PUD42133C158G2VS 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-4000C18-8GTRS 8GB

G Skill Intl F4-4000C18-8GTRS 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Smart Modular SF464128CKHIWDFSEG 4GB

Smart Modular SF464128CKHIWDFSEG 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT32G4DFD832A.C16FE 32GB

Crucial Technology CT32G4DFD832A.C16FE 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB