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A-DATA Technology AD73I1B1672EG 2GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB

A-DATA Technology AD73I1B1672EG 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB

总分
star star star star star
A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB

差异 规格 评论

差异

A-DATA Technology AD73I1B1672EG 2GB 需要考虑的原因
A-DATA Technology AD73I1B1672EG 2GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB
报告一个错误
  • 更快的读取速度，GB/s
    13.4 left arrow 12.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1B1672EG 2GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    26 left arrow 26
  • 读取速度，GB/s
    12.2 left arrow 13.4
  • 写入速度，GB/s
    8.5 left arrow 8.5
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1677 left arrow 1836

A-DATA Technology AD73I1B1672EG 2GB RAM的比较

Kingston ACR16D3LFS1KBG/2G 2GB
Kingston 9905702-029.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB RAM的比较

Kingston HP536727-H41-ELD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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