PNY Electronics PNY 2GB vs Corsair CMR16GX4M2C 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Corsair CMR16GX4M2C 8GB

Corsair CMR16GX4M2C 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 66

左右 59% 更低的延时
更快的读取速度，GB/s

13.8 11.4

测试中的平均数值
更快的写入速度，GB/s

8.4 7.2

测试中的平均数值

Corsair CMR16GX4M2C 8GB

需要考虑的原因
Corsair CMR16GX4M2C 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Corsair CMR16GX4M2C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 66
读取速度，GB/s

13.8 11.4
写入速度，GB/s

8.4 7.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 1604

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Kingston KHX1600C9D3/8G 8GB

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Micron Technology 18ASF2G72AZ-2G3B1 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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A-DATA Technology AO2P26KC8T1-BPYS 8GB

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Kingston 9965589-026.D00G 8GB

Kingston KHX318C10FR/8G 8GB

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Crucial Technology CT16G4DFD8213.C16FAD 16GB

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A-DATA Technology VDQVE1B16 2GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-2400C15-8GVS 8GB

G Skill Intl F4-2400C15-8GVS 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Crucial Technology BL4G24C16U4B.8FE 4GB

Crucial Technology BL4G24C16U4B.8FE 4GB