Samsung M378B5673EH1-CF8 2GB vs Samsung M391A1K43BB2-CTD 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 64

左右 56% 更低的延时

Samsung M391A1K43BB2-CTD 8GB

需要考虑的原因
Samsung M391A1K43BB2-CTD 8GB

报告一个错误

更快的读取速度，GB/s

17.5 12.7

测试中的平均数值
更快的写入速度，GB/s

9.3 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Samsung M391A1K43BB2-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 64
读取速度，GB/s

12.7 17.5
写入速度，GB/s

7.5 9.3
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1988 2205

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Corsair CM4X16GC3000C16K4D 16GB

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Samsung M471A2K43CB1-CRC 16GB

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Nanya Technology M2X4G64CB8HG5N-DG 4GB

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Kingston HP26D4S9S8MHF-8 8GB

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Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3200C16-8GSX 8GB

G Skill Intl F4-3200C16-8GSX 8GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

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Samsung M393B2G70BH0-CH9 16GB

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SK Hynix HMA451U7MFR8N-TF 4GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB