RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-4400C18-8GTZRC 8GB
Compare
Samsung M393B5170FH0-CK0 4GB vs G Skill Intl F4-4400C18-8GTZRC 8GB
Overall score
Samsung M393B5170FH0-CK0 4GB
Overall score
G Skill Intl F4-4400C18-8GTZRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5170FH0-CK0 4GB
Report a bug
Below the latency in the PassMark tests, ns
27
30
Around 10% lower latency
Reasons to consider
G Skill Intl F4-4400C18-8GTZRC 8GB
Report a bug
Faster reading speed, GB/s
22.3
11.8
Average value in the tests
Faster write speed, GB/s
16.3
7.3
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-4400C18-8GTZRC 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
30
Read speed, GB/s
11.8
22.3
Write speed, GB/s
7.3
16.3
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2057
3697
Samsung M393B5170FH0-CK0 4GB RAM comparisons
Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB
G Skill Intl F4-4400C18-8GTZRC 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-4400C18-8GTZRC 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3000C14-8GTZR 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Kingston KHX3466C16D4/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-16GTZKO 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFD8213.C16FAD 16GB
Protocol Engines Kingrock 800 2GB 2GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston 9905678-042.A00G 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMK64GX4M2D3600C18 32GB
Kingston 9905403-134.A00LF 2GB
SK Hynix HMA851U6JJR6N-VK 4GB
Kingston 99U5584-001.A00LF 4GB
Corsair CMT32GX4M2D3600C18 16GB
Kingston ACR512X64D3S13C9G 4GB
Ramsta Ramsta-2400Mhz-4G 4GB
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Kingston KHX1866C10D3/4G 4GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
Kingston K1N7HK-ELC 2GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Report a bug
×
Bug description
Source link