RAM comparison Samsung M393B5170FH0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Samsung M393B5170FH0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Overall score

Samsung M393B5170FH0-CK0 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M393B5170FH0-CK0 4GB

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Faster reading speed, GB/s

14.3 11.8

Average value in the tests
Faster write speed, GB/s

11.4 7.3

Average value in the tests
Higher memory bandwidth, mbps

17000 12800

Around 1.33 higher bandwidth

Complete list of technical specifications

Samsung M393B5170FH0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2057 2481

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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