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Samsung M393B5170FH0-CK0 4GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB

Samsung M393B5170FH0-CK0 4GB vs Micron Technology 16ATF2G64HZ-2G6E3 16GB

Overall score
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Overall score
star star star star star
Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Differences Specifications Comments

Differences

Samsung M393B5170FH0-CK0 4GB Reasons to consider
Samsung M393B5170FH0-CK0 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 34
    Around 21% lower latency
Micron Technology 16ATF2G64HZ-2G6E3 16GB Reasons to consider
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Report a bug
  • Faster reading speed, GB/s
    15.8 left arrow 11.8
    Average value in the tests
  • Faster write speed, GB/s
    12.4 left arrow 7.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B5170FH0-CK0 4GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 34
  • Read speed, GB/s
    11.8 left arrow 15.8
  • Write speed, GB/s
    7.3 left arrow 12.4
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2057 left arrow 2902

Samsung M393B5170FH0-CK0 4GB RAM comparisons

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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