RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5170FH0-CK0 4GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Compare
Samsung M393B5170FH0-CK0 4GB vs SK Hynix HMAA1GU6CJR6N-XN 8GB
Overall score
Samsung M393B5170FH0-CK0 4GB
Overall score
SK Hynix HMAA1GU6CJR6N-XN 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5170FH0-CK0 4GB
Report a bug
Below the latency in the PassMark tests, ns
27
34
Around 21% lower latency
Reasons to consider
SK Hynix HMAA1GU6CJR6N-XN 8GB
Report a bug
Faster reading speed, GB/s
16.7
11.8
Average value in the tests
Faster write speed, GB/s
10.6
7.3
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5170FH0-CK0 4GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
34
Read speed, GB/s
11.8
16.7
Write speed, GB/s
7.3
10.6
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2057
2789
Samsung M393B5170FH0-CK0 4GB RAM comparisons
Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB
SK Hynix HMAA1GU6CJR6N-XN 8GB RAM comparisons
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-4000C18-8GTZ 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Team Group Inc. TEAMGROUP-SD4-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston K000MD44U 4GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
SK Hynix GKE160SO102408-3000 16GB
Kingston 9905403-090.A01LF 4GB
Ramaxel Technology RMSA3260MD78HAF-2666 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
G Skill Intl F4-3200C14-16GTRS 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
SK Hynix HMA41GR7AFR4N-TF 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Samsung M471A2K43CB1-CTD 16GB
Samsung 1600 CL10 Series 8GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4133C19-8GTZC 8GB
Peak Electronics 256X64M-67E 2GB
Samsung M471A4G43MB1-CTD 32GB
Samsung M378B5173BH0-CH9 4GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
INTENSO GKE800UD102408-2133 8GB
Report a bug
×
Bug description
Source link