RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5270CH0-CH9 4GB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
Compare
Samsung M393B5270CH0-CH9 4GB vs Gloway International Co. Ltd. WAR4U2666D19081C 8GB
Overall score
Samsung M393B5270CH0-CH9 4GB
Overall score
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5270CH0-CH9 4GB
Report a bug
Below the latency in the PassMark tests, ns
42
70
Around 40% lower latency
Faster write speed, GB/s
9.0
7.9
Average value in the tests
Reasons to consider
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
Report a bug
Faster reading speed, GB/s
15.7
10.6
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5270CH0-CH9 4GB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
70
Read speed, GB/s
10.6
15.7
Write speed, GB/s
9.0
7.9
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2423
1934
Samsung M393B5270CH0-CH9 4GB RAM comparisons
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Ramaxel Technology RMR5040ED58E9W1600 4GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Good Wealth Technology Ltd. KETECH 8GB
Super Talent STT-WB160CL0901 2GB
DSL Memory D4SS1G082SH21A-B 16GB
Kingston 99U5429-014.A00LF 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston KF3600C16D4/8GX 8GB
Apacer Technology 75.A73AA.G03 2GB
Samsung M378A4G43AB2-CWE 32GB
SK Hynix HMT325S6BFR8C-H9 2GB
DSL Memory D4SH1G081SH26A-C 8GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-3200C16-16GTZKO 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-4000C18-8GTZKK 8GB
Kingston KHX1866C9D3/8GX 8GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMK64GX4M4C3200C16 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK32GX4M2D3000C16 16GB
Report a bug
×
Bug description
Source link