RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5270CH0-CH9 4GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Compare
Samsung M393B5270CH0-CH9 4GB vs Micron Technology 8ATF51264HZ-2G1B1 4GB
Overall score
Samsung M393B5270CH0-CH9 4GB
Overall score
Micron Technology 8ATF51264HZ-2G1B1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5270CH0-CH9 4GB
Report a bug
Reasons to consider
Micron Technology 8ATF51264HZ-2G1B1 4GB
Report a bug
Below the latency in the PassMark tests, ns
34
42
Around -24% lower latency
Faster reading speed, GB/s
14.3
10.6
Average value in the tests
Faster write speed, GB/s
10.9
9.0
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5270CH0-CH9 4GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
34
Read speed, GB/s
10.6
14.3
Write speed, GB/s
9.0
10.9
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2423
2201
Samsung M393B5270CH0-CH9 4GB RAM comparisons
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB
Micron Technology 8ATF51264HZ-2G1B1 4GB RAM comparisons
Corsair CM5S16GM4800A40K2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KF552C40-16 16GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
G Skill Intl F4-3600C18-8GTZRX 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMN32GX4M2Z3200C16 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
A-DATA Technology DDR4 3600 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2800C16-4GRK 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
Asgard VMA45UG-MEC1U2AW1 8GB
Smart Modular SF4641G8CK8I8HLSBG 8GB
Hexon Technology Pte Ltd HEXON 1GB
Wilk Elektronik S.A. IR2133D464L15S/8G 8GB
SpecTek Incorporated ?????????????????? 2GB
SK Hynix GKE160SO102408-3000 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMW16GX4M2D3600C16 8GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology BL16G32C16U4R.16FE 16GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMK32GX4M2A2400C14 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2133C15-4GNT 4GB
Report a bug
×
Bug description
Source link