RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5270CH0-CH9 4GB
SK Hynix HMA41GR7BJR4N-UH 8GB
Compare
Samsung M393B5270CH0-CH9 4GB vs SK Hynix HMA41GR7BJR4N-UH 8GB
Overall score
Samsung M393B5270CH0-CH9 4GB
Overall score
SK Hynix HMA41GR7BJR4N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5270CH0-CH9 4GB
Report a bug
Reasons to consider
SK Hynix HMA41GR7BJR4N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
42
Around -45% lower latency
Faster reading speed, GB/s
12.5
10.6
Average value in the tests
Faster write speed, GB/s
9.7
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5270CH0-CH9 4GB
SK Hynix HMA41GR7BJR4N-UH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
29
Read speed, GB/s
10.6
12.5
Write speed, GB/s
9.0
9.7
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2423
2609
Samsung M393B5270CH0-CH9 4GB RAM comparisons
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB
SK Hynix HMA41GR7BJR4N-UH 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CMV4GX3M1B1600C11 4GB
Kingston KGTWW1-MIE 4GB
G Skill Intl F3-1866C8-8GTX 8GB
Avant Technology J642GU42J5213N2 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9965596-023.B01G 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
A-DATA Technology AX4S2800316G18-B 16GB
Avant Technology F641GU67F9333G 8GB
Kingston CBD26D4U9S8MH-8 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C19-8GVK 8GB
Samsung M393B5270CH0-CH9 4GB
SK Hynix HMA41GR7BJR4N-UH 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BL8G32C16U4WL.M8FE1 8GB
Kingston 9905471-001.A01LF 2GB
Micron Technology M471A1K43CB1-CTD 8GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston KF2666C16D4/16G 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M393A2K43BB1-CPB 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M378A1K43BB2-CTD 8GB
Report a bug
×
Bug description
Source link