RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Crucial Technology CT8G4DFD8213.C16FAR2 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
16.3
Average value in the tests
Faster write speed, GB/s
2,404.5
11.7
Average value in the tests
Reasons to consider
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
Report a bug
Below the latency in the PassMark tests, ns
33
104
Around -215% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
33
Read speed, GB/s
3,192.0
16.3
Write speed, GB/s
2,404.5
11.7
Memory bandwidth, mbps
6400
17000
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
no data
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
786
2930
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1K70QB0-CK0 8GB
Gloway International (HK) STK4U2400D17042C 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Corsair CMK8GX4M2B4266C19 4GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3200C16-16GTZSW 16GB
Samsung M3 78T2863EHS-CF7 1GB
EVGA 16G-D4-2666-MR 4GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2666C15-4GVK 4GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905624-018.A00G 8GB
Samsung M471B1G73DB0-YK0 8GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3000C14-16GTZ 16GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
INTENSO 5641160 8GB
Samsung M393B1K70CH0-YH9 8GB
Kingston 9905712-035.A00G 16GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK32GX4M4E4133C19 8GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BL32G36C16U4B.M16FB1 32GB
Report a bug
×
Bug description
Source link