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Samsung M395T2863QZ4-CF76 1GB
Micron Technology 8HTF12864HDZ-800E1 1GB

Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 8HTF12864HDZ-800E1 1GB

Overall score
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Overall score
star star star star star
Micron Technology 8HTF12864HDZ-800E1 1GB

Micron Technology 8HTF12864HDZ-800E1 1GB

Differences Specifications Comments

Differences

Samsung M395T2863QZ4-CF76 1GB Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 2
    Average value in the tests
  • Faster write speed, GB/s
    2,404.5 left arrow 1,190.3
    Average value in the tests
Micron Technology 8HTF12864HDZ-800E1 1GB Reasons to consider
Micron Technology 8HTF12864HDZ-800E1 1GB
Report a bug
  • Below the latency in the PassMark tests, ns
    59 left arrow 104
    Around -76% lower latency

Specifications

Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    104 left arrow 59
  • Read speed, GB/s
    3,192.0 left arrow 2,178.7
  • Write speed, GB/s
    2,404.5 left arrow 1,190.3
  • Memory bandwidth, mbps
    6400 left arrow 6400
Other
  • Description
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • Timings / Clock speed
    no data left arrow 5-5-5-15 / 800 MHz
  • Ranking PassMark (The more the better)
    786 left arrow 406

Samsung M395T2863QZ4-CF76 1GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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