Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 8HTF12864HDZ-800E1 1GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Micron Technology 8HTF12864HDZ-800E1 1GB

Micron Technology 8HTF12864HDZ-800E1 1GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 2

测试中的平均数值
更快的写入速度，GB/s

2,404.5 1,190.3

测试中的平均数值

Micron Technology 8HTF12864HDZ-800E1 1GB

需要考虑的原因
Micron Technology 8HTF12864HDZ-800E1 1GB

报告一个错误

低于PassMark测试中的延时，ns

59 104

左右 -76% 更低的延时

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Micron Technology 8HTF12864HDZ-800E1 1GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

104 59
读取速度，GB/s

3,192.0 2,178.7
写入速度，GB/s

2,404.5 1,190.3
内存带宽，mbps

6400 6400

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

no data 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

786 406

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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