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Samsung M395T2863QZ4-CF76 1GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 8HTF12864HDZ-800E1 1GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Micron Technology 8HTF12864HDZ-800E1 1GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
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Faster reading speed, GB/s
3
2
Average value in the tests
Faster write speed, GB/s
2,404.5
1,190.3
Average value in the tests
Reasons to consider
Micron Technology 8HTF12864HDZ-800E1 1GB
Report a bug
Below the latency in the PassMark tests, ns
59
104
Around -76% lower latency
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Main characteristics
Memory type
DDR2
DDR2
Latency in PassMark, ns
104
59
Read speed, GB/s
3,192.0
2,178.7
Write speed, GB/s
2,404.5
1,190.3
Memory bandwidth, mbps
6400
6400
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
Timings / Clock speed
no data
5-5-5-15 / 800 MHz
Ranking PassMark (The more the better)
786
406
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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