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Samsung M395T2863QZ4-CF76 1GB
Micron Technology 8HTF12864HDZ-800E1 1GB

Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 8HTF12864HDZ-800E1 1GB

Note globale
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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Note globale
star star star star star
Micron Technology 8HTF12864HDZ-800E1 1GB

Micron Technology 8HTF12864HDZ-800E1 1GB

Différences Spécifications Commentaires

Différences

Samsung M395T2863QZ4-CF76 1GB Raisons de considérer
Samsung M395T2863QZ4-CF76 1GB
Signaler un bogue
  • Vitesse de lecture plus rapide, GB/s
    3 left arrow 2
    Valeur moyenne dans les tests
  • Vitesse d'écriture plus rapide, GB/s
    2,404.5 left arrow 1,190.3
    Valeur moyenne dans les tests
Micron Technology 8HTF12864HDZ-800E1 1GB Raisons de considérer
Micron Technology 8HTF12864HDZ-800E1 1GB
Signaler un bogue
  • En dessous de la latence dans les tests PassMark, ns
    59 left arrow 104
    Autour de -76% latence réduite

Spécifications

Liste complète des spécifications techniques
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Principales caractéristiques
  • Type de mémoire
    DDR2 left arrow DDR2
  • Latence dans PassMark, ns
    104 left arrow 59
  • Vitesse de lecture, GB/s
    3,192.0 left arrow 2,178.7
  • Vitesse d'écriture, GB/s
    2,404.5 left arrow 1,190.3
  • Largeur de bande de la mémoire, mbps
    6400 left arrow 6400
Other
  • Description
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • Timings / Vitesse d'horloge
    no data left arrow 5-5-5-15 / 800 MHz
  • Classement PassMark (Plus il y en a, mieux c'est)
    786 left arrow 406

Samsung M395T2863QZ4-CF76 1GB Comparaison des RAM

takeMS International AG TMS2GS264D081805AV 2GB

Micron Technology 8HTF12864HDZ-800E1 1GB Comparaison des RAM

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
Kingston HP24D4U7S8MBP-4 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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