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Samsung M395T2863QZ4-CF76 1GB
takeMS International AG TMS2GS264D081805AV 2GB

Samsung M395T2863QZ4-CF76 1GB vs takeMS International AG TMS2GS264D081805AV 2GB

Note globale
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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Note globale
star star star star star
takeMS International AG TMS2GS264D081805AV 2GB

takeMS International AG TMS2GS264D081805AV 2GB

Différences Spécifications Commentaires

Différences

Samsung M395T2863QZ4-CF76 1GB Raisons de considérer
Samsung M395T2863QZ4-CF76 1GB
Signaler un bogue
  • Vitesse de lecture plus rapide, GB/s
    3 left arrow 2
    Valeur moyenne dans les tests
takeMS International AG TMS2GS264D081805AV 2GB Raisons de considérer
takeMS International AG TMS2GS264D081805AV 2GB
Signaler un bogue
  • En dessous de la latence dans les tests PassMark, ns
    86 left arrow 104
    Autour de -21% latence réduite
  • Vitesse d'écriture plus rapide, GB/s
    891.6 left arrow 2,404.5
    Valeur moyenne dans les tests

Spécifications

Liste complète des spécifications techniques
Samsung M395T2863QZ4-CF76 1GB
takeMS International AG TMS2GS264D081805AV 2GB
Principales caractéristiques
  • Type de mémoire
    DDR2 left arrow DDR2
  • Latence dans PassMark, ns
    104 left arrow 86
  • Vitesse de lecture, GB/s
    3,192.0 left arrow 2,444.5
  • Vitesse d'écriture, GB/s
    2,404.5 left arrow 891.6
  • Largeur de bande de la mémoire, mbps
    6400 left arrow 6400
Other
  • Description
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Vitesse d'horloge
    no data left arrow 5-5-5-15 / 800 MHz
  • Classement PassMark (Plus il y en a, mieux c'est)
    786 left arrow 322

Samsung M395T2863QZ4-CF76 1GB Comparaison des RAM

Micron Technology 8HTF12864HDZ-800E1 1GB

takeMS International AG TMS2GS264D081805AV 2GB Comparaison des RAM

Kingston 9905622-025.A00G 4GB
Corsair CMWX16GC3000C15W4 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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