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Samsung M395T2863QZ4-CF76 1GB
takeMS International AG TMS2GS264D081805AV 2GB

Samsung M395T2863QZ4-CF76 1GB vs takeMS International AG TMS2GS264D081805AV 2GB

总分
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
takeMS International AG TMS2GS264D081805AV 2GB

takeMS International AG TMS2GS264D081805AV 2GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 2
    测试中的平均数值
takeMS International AG TMS2GS264D081805AV 2GB 需要考虑的原因
takeMS International AG TMS2GS264D081805AV 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    86 left arrow 104
    左右 -21% 更低的延时
  • 更快的写入速度，GB/s
    891.6 left arrow 2,404.5
    测试中的平均数值

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
takeMS International AG TMS2GS264D081805AV 2GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    104 left arrow 86
  • 读取速度，GB/s
    3,192.0 left arrow 2,444.5
  • 写入速度，GB/s
    2,404.5 left arrow 891.6
  • 内存带宽，mbps
    6400 left arrow 6400
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
  • 时序/时钟速度
    no data left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    786 left arrow 322

Samsung M395T2863QZ4-CF76 1GB RAM的比较

Micron Technology 8HTF12864HDZ-800E1 1GB

takeMS International AG TMS2GS264D081805AV 2GB RAM的比较

Kingston ASU21D4U5S1MB-4 4GB
Corsair CMW32GX4M2C3466C16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston 9905625-066.A00G 16GB
Kingston 9905625-066.A00G 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
takeMS International AG TMS2GS264D081805AV 2GB
takeMS International AG TMS2GS264D081805AV 2GB
内存RAM
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMX8GX3M2A2000C9 4GB
SK Hynix HMA82GU6JJR8N-VK 16GB
SK Hynix HMA82GU6JJR8N-VK 16GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
内存RAM
Kingston 9965525-010.A00LF 4GB
Kingston 9965525-010.A00LF 4GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
内存RAM
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Samsung M471B5273EB0-CK0 4GB
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Apacer Technology 78.CAGRN.40C0B 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston XVTW4H-MIE 32GB
Kingston XVTW4H-MIE 32GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Maxsun MSD44G24Q3 4GB
Maxsun MSD44G24Q3 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
内存RAM
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Kingston 9965669-018.A00G 16GB
Apacer Technology GD2.1129WH.001 16GB
Apacer Technology GD2.1129WH.001 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.CAGMT.40C0B 8GB
Apacer Technology 78.CAGMT.40C0B 8GB
内存RAM
Crucial Technology CT51264BA160BJ.8F1 4GB
Crucial Technology CT51264BA160BJ.8F1 4GB
Crucial Technology CT51264BA160BJ.M8F 4GB
Crucial Technology CT51264BA160BJ.M8F 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT16G4SFD824A.C16FE 16GB
Crucial Technology CT16G4SFD824A.C16FE 16GB
内存RAM