Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Samsung M378A5244CB0-CVF 4GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时
更快的读取速度，GB/s

16.7 16

测试中的平均数值

Samsung M378A5244CB0-CVF 4GB

需要考虑的原因
Samsung M378A5244CB0-CVF 4GB

报告一个错误

更快的写入速度，GB/s

12.3 11.8

测试中的平均数值
更高的内存带宽，mbps

23400 21300

左右 1.1 更高的带宽

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M378A5244CB0-CVF 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

16.7 16.0
写入速度，GB/s

11.8 12.3
内存带宽，mbps

21300 23400

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2756 2709

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 8ATF1G64HZ-2G3B2 8GB

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Micron Technology 9ASF51272AZ-2G3B1 4GB

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Samsung M391B5273CH0-CH9 4GB

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Corsair CMD8GX3M2A2933C12 4GB

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G Skill Intl F4-3200C16-16GIS 16GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

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G Skill Intl F4-3600C16-16GTZRC 16GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3600C14-16GVK 16GB

G Skill Intl F4-3600C14-16GVK 16GB