RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Crucial Technology CT8G4SFS824A.C8FHD1 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
14
Average value in the tests
Faster write speed, GB/s
2,404.5
10.5
Average value in the tests
Reasons to consider
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
Report a bug
Below the latency in the PassMark tests, ns
36
104
Around -189% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
36
Read speed, GB/s
3,192.0
14.0
Write speed, GB/s
2,404.5
10.5
Memory bandwidth, mbps
6400
19200
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
786
2519
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Crucial Technology CT8G4SFS824A.C8FHD1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT2K102464BD160B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378A1K43EB2-CWE 8GB
Kingston KF3200C16D4/16GX 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M391A1K43BB2-CTD 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston 9905624-013.A00G 8GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C16-8GTZRC 8GB
Kingston KVR800D2N6/2G 2GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Kingston 9965516-112.A00LF 16GB
Essencore Limited 8GBF1X08QFHH38-135-K 8GB
Corsair CMX4GX3M2A1600C9 2GB
Samsung M471A1A43CB1-CRC 8GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3600C17-8GVK 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
SK Hynix HMA451U6AFR8N-TF 4GB
V-GEN D4S8GL30A8TS5 8GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-3200C14-8GTZKY 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
Corsair CMX4GX3M2A1600C9 2GB
Panram International Corporation PUD42133C154G2VS 4GB
Report a bug
×
Bug description
Source link