RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3200C15-8GTZKY 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs G Skill Intl F4-3200C15-8GTZKY 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
G Skill Intl F4-3200C15-8GTZKY 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
19.4
Average value in the tests
Faster write speed, GB/s
2,404.5
15.5
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C15-8GTZKY 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
104
Around -316% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3200C15-8GTZKY 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
25
Read speed, GB/s
3,192.0
19.4
Write speed, GB/s
2,404.5
15.5
Memory bandwidth, mbps
6400
17000
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
no data
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
786
3673
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
G Skill Intl F4-3200C15-8GTZKY 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-2400C15-8GTZRX 8GB
Samsung M4 70T2864QZ3-CE6 1GB
Mushkin MR[A/B]4U320LLLM16G 16GB
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR4 4133 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM4X8GF2400C14K4 8GB
Kingston 99U5474-013.A00LF 2GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
Kingston KHX1600C9D3/4G 4GB
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB
A-DATA Technology DOVF1B163G2G 2GB
Wilk Elektronik S.A. GR2133S464L15/16G 16GB
Kingston KP223C-ELD 2GB
Golden Empire CL16-18-18 D4-3400 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 99U5663-001.A00G 16GB
Samsung M471B5673FH0-CF8 2GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CMK16GX4M2D2400C14 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMU64GX4M4C3200C16 16GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
Report a bug
×
Bug description
Source link