RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 4ATF1G64HZ-3G2B2 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
16.1
Average value in the tests
Faster write speed, GB/s
2,404.5
11.9
Average value in the tests
Reasons to consider
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Report a bug
Below the latency in the PassMark tests, ns
39
104
Around -167% lower latency
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
39
Read speed, GB/s
3,192.0
16.1
Write speed, GB/s
2,404.5
11.9
Memory bandwidth, mbps
6400
25600
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
no data
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
786
2782
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3600C19-16GSXF 16GB
Samsung M393B2G70BH0-CK0 16GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CM4X16GC3000C15K4 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingston HP32D4S2S1ME-4 4GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Kingston ACR16D3LS1NGG/2G 2GB
G Skill Intl F4-4000C18-8GTZSW 8GB
A-DATA Technology DQKD1A08 1GB
Corsair CMU16GX4M2D3000C16 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
G Skill Intl F4-4000C18-16GTZN 16GB
SK Hynix HYMP112U64CP8-Y5 1GB
Samsung M471A2K43CB1-CRC 16GB
Team Group Inc. Team-Elite-1333 4GB
SK Hynix HMA41GR7AFR8N-UH 8GB
Crucial Technology CT102464BA160B.M16 8GB
Kingston KHX3200C16D4/32GX 32GB
Report a bug
×
Bug description
Source link