RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
en
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M4 70T2864QZ3-CE6 1GB
Samsung M4 70T2864EH3-CF7 1GB

Samsung M4 70T2864QZ3-CE6 1GB vs Samsung M4 70T2864EH3-CF7 1GB

Overall score
star star star star star
Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

Overall score
star star star star star
Samsung M4 70T2864EH3-CF7 1GB

Samsung M4 70T2864EH3-CF7 1GB

Differences Specifications Comments

Differences

Samsung M4 70T2864QZ3-CE6 1GB Reasons to consider
Samsung M4 70T2864QZ3-CE6 1GB
Report a bug
  • Below the latency in the PassMark tests, ns
    65 left arrow 70
    Around 7% lower latency
  • Faster reading speed, GB/s
    3 left arrow 3
    Average value in the tests
Samsung M4 70T2864EH3-CF7 1GB Reasons to consider
Samsung M4 70T2864EH3-CF7 1GB
Report a bug
  • Faster write speed, GB/s
    1,643.2 left arrow 1,574.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    6400 left arrow 5300
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T2864QZ3-CE6 1GB
Samsung M4 70T2864EH3-CF7 1GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    65 left arrow 70
  • Read speed, GB/s
    3,858.9 left arrow 3,279.9
  • Write speed, GB/s
    1,574.4 left arrow 1,643.2
  • Memory bandwidth, mbps
    5300 left arrow 6400
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 5-5-5-15 / 800 MHz
  • Ranking PassMark (The more the better)
    607 left arrow 454

Samsung M4 70T2864QZ3-CE6 1GB RAM comparisons

Samsung M4 70T2864QZ3-CF7 1GB
Kingston KVR800D2S6/4G 4GB

Samsung M4 70T2864EH3-CF7 1GB RAM comparisons

Samsung M4 70T2953EZ3-CE6 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
Memory RAM
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
G Skill Intl F4-3200C15-16GTZ 16GB
G Skill Intl F4-3200C15-16GTZ 16GB
Memory RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Panram International Corporation PUD42400C154G4NJK 4GB
Panram International Corporation PUD42400C154G4NJK 4GB
Memory RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-2933C16-16GFX 16GB
G Skill Intl F4-2933C16-16GFX 16GB
Memory RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Kingston ACR26D4U9S8ME-8X 8GB
Kingston ACR26D4U9S8ME-8X 8GB
Memory RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-4200C19-4GTZ 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
Memory RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Panram International Corporation PUD42400C154G4NJK 4GB
Panram International Corporation PUD42400C154G4NJK 4GB
Memory RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Transcend Information AQD-D4U4GN21-SG 4GB
Transcend Information AQD-D4U4GN21-SG 4GB
Memory RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Memory RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMWX8GD3600C18W4 8GB
Corsair CMWX8GD3600C18W4 8GB
Memory RAM
Mushkin 991988 (996988) 4GB
Mushkin 991988 (996988) 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Memory RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
Kingston 9905704-007.A00G 4GB
Kingston 9905704-007.A00G 4GB
Memory RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston HP24D4R7D4MAM-32 32GB
Kingston HP24D4R7D4MAM-32 32GB
Memory RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Memory RAM