RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T2864QZ3-CF7 1GB
Avant Technology W6451U66J9266ND 4GB
Compare
Samsung M4 70T2864QZ3-CF7 1GB vs Avant Technology W6451U66J9266ND 4GB
Overall score
Samsung M4 70T2864QZ3-CF7 1GB
Overall score
Avant Technology W6451U66J9266ND 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2864QZ3-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
16.6
Average value in the tests
Reasons to consider
Avant Technology W6451U66J9266ND 4GB
Report a bug
Below the latency in the PassMark tests, ns
72
74
Around -3% lower latency
Faster write speed, GB/s
8.2
2,201.1
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2864QZ3-CF7 1GB
Avant Technology W6451U66J9266ND 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
74
72
Read speed, GB/s
4,178.4
16.6
Write speed, GB/s
2,201.1
8.2
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
508
1731
Samsung M4 70T2864QZ3-CF7 1GB RAM comparisons
Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB
Avant Technology W6451U66J9266ND 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-061.A00LF 2GB
Corsair CMK16GX4M2D3200C16 8GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Kingston 99U5471-030.A00LF 8GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Avant Technology J641GU42J7240ND 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3600C18-8GTZRX 8GB
Samsung M378B5673EH1-CF8 2GB
Kllisre 8GB
Kingston 99U5471-056.A00LF 8GB
Micron Technology AFSD416ES1P 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Corsair CMWB8G1L3200K16W4 8GB
TwinMOS 8DPT5MK8-TATP 2GB
NSITEXE Inc Visenta 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C15-8GRRB 8GB
Kingston 9905403-134.A00LF 2GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston 9965643-002.A01G 4GB
Report a bug
×
Bug description
Source link