RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T2864QZ3-CF7 1GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Compare
Samsung M4 70T2864QZ3-CF7 1GB vs Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Overall score
Samsung M4 70T2864QZ3-CF7 1GB
Overall score
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2864QZ3-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
20.3
Average value in the tests
Faster write speed, GB/s
2,201.1
13.4
Average value in the tests
Reasons to consider
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
74
Around -118% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2864QZ3-CF7 1GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
74
34
Read speed, GB/s
4,178.4
20.3
Write speed, GB/s
2,201.1
13.4
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
508
3343
Samsung M4 70T2864QZ3-CF7 1GB RAM comparisons
Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T2864QZ3-CF7 1GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMD32GX4M4B2400C10 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
Elpida EBE21UE8ACUA-8G-E 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
AMD R748G2133U2S 8GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3333C16-16GTZ 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMW8GX4M1Z3600C18 8GB
Strontium EVMT8G1600U86S 8GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Corsair CMU16GX4M2C3200C16 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-2800C15-8GTXG 8GB
AMD AE34G1601U1 4GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
Report a bug
×
Bug description
Source link